je referred transistor, law' bipolar junction transistor, cha' back-to-back diode pn junction equivalent. collector Qu'mey potlh ic Dumerbe' forward mavalqu'mo' eb vay' qung vo' emitter Sep, during baS Sep collector, SIch HochHom collector cb 'ej SIch neH junction mavalqu'mo' reverse barrier bopummeH electric yotlh action qung veH injected. pa' circuit common-emitter transistor, Segh waw' circuit launches voltage mavalqu'mo' chagh mach.
500 ω collector pa' voltage chagh across load resistance vrc = 10ma * 500 ω 5v, transistor voltage chagh DuqIppu'chugh collector vce emitter = 5v, = vaj alternate waw' stacking qaStaHvIS mavalqu'mo' circuit mach Qu'mey potlh ib, nargh qaStaHvIS collector circuit correspond alternating Qu'mey potlh ic, [taH ghap ib beta, bipolar transistor 39 vIlopQo' jay'; = tlhoj s Qu'mey potlh amplification.
voltage emitter SabtaHbogh mavalqu'mo' HochHom collector 'ej chel reverse mavalqu'mo' collector. qaSchoH vbe mach, vaj waw' Qu'mey potlh approximately ib 5v ghap 50 k ω = = 0.1ma. vaj vIlopQo' jay' 39 transistor tI s emitter Qu'mey potlh coefficient β amplifying ic ghap ib = 100, collector Qu'mey potlh ic = = beta * ib = 10ma.